DTB114EL-AL3-R datasheet(2/3 Pages) UTC

2 / 3 page

DTB114E

PNP SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

www.unisonic.com.tw

QW-R206-042,D

ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATING

UNIT

Supply Voltage

VCC

-50

Input Voltage

VIN

-40~+10

Output Current

IOUT

-500

Power Dissipation

200

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input Voltage

VIN(OFF)

VCC= -5V, IOUT= -100μA

-0.5

VIN(ON)

VOUT= -0.3V, IOUT= -10mA

-3

Output Voltage

VOUT(ON) IOUT/IIN= -50mA/-2.5 mA

-0.1

-0.3

Input Current

IIN

VIN= -5V

-0.88

Output Current

IOUT(OFF)

VCC= -50V , VIN=0V

-0.5

μA

DC Current Gain

hFE

VOUT= -5V, IOUT= -50mA

Input Resistance

kΩ

Resistance Ratio

R2/R1

0.8

1.2

Transition Frequency

VCE= -10 V, IE=5mA, f=100MHz(Note)

200

MHz

Note: Transition frequency of the device

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