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UTD454G-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

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Giải thích chi tiết về linh kiện  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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UTD454G-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UTD454
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-259.C
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (TC=25°C)
ID
12
A
Pulsed Drain Current (Note 2)
IDM
30
A
Avalanche Current (Note 2)
IAR
12
A
Repetitive avalanche energy (L=0.1mH)(Note 2)
EAR
20
mJ
Power Dissipation (TC=25°C)
PD
20
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
60
°C/W
Junction to Case
θJC
3
°C/W
Note: Surface mounted on 1 in
2 copper pad of FR4 board with 2oz
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250μA, VGS=0V
40
V
Drain-Source Leakage Current
IDSS
VDS=32V, VGS=0V
1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
1.8
2.3
3
V
On-State Drain Current
ID(ON)
VGS=10V, VDS=5V
30
A
Drain to Source On-state Resistance
RDS(ON)
VGS=10V, ID=12A
25
33
mΩ
VGS=4.5V, ID=6A
34
47
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=20V, f=1MHz
404
500
pF
Output Capacitance
COSS
95
150
pF
Reverse Transfer Capacitance
CRSS
37
60
nC
Gate resistance
RG
VGS=0V, VDS=0V, f=1MHz
2.7
Ω
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
VGS=10V, VDS=20V, RL=1.7Ω,
RGEN=3Ω
3.5
ns
Turn-ON Rise Time
tR
6
ns
Turn-OFF Delay Time
tD(OFF)
13.2
ns
Turn-OFF Fall-Time
tF
3.5
ns
Total Gate Charge
QG
VGS=10V, VDS=20V, ID=12A
9.2
nC
Gate Source Charge
QGS
1.6
nC
Gate Drain Charge
QGD
2.6
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1A, VGS=0V
0.76
1
V
Diode Continuous Forward Current
IS
12
A
Reverse Recovery Time
trr
IF=12A, dI/dt=100A/µs
22.9
ns
Reverse Recovery Charge
QRR
18.3
nC
Note: Pulse width ≤300μs, duty cycle≤0.5%.



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