DTA143TL-AL3-R datasheet(2/3 Pages) UTC

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DTA143T

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-058,E

ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

Collector Current

-100

Collector Power Dissipation

SOT-23/SOT-323

200

SOT-523

150

Junction Temperature

+150

℃

Storage Temperature

TSTG

-40~+150

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-base breakdown voltage

BVCBO IC=-50μA

-50

Collector-emitter breakdown voltage

BVCEO IC=-1mA

-50

Emitter-base breakdown voltage

BVEBO IE=-50μA

-5

Collector cutoff current

ICBO

VCB=-50V

-0.5

μA

Emitter cutoff current

IEBO

VEB=-4V

-0.5

μA

Collector-emitter saturation voltage

VCE(SAT) IC=-5mA, IB= -0.25mA

-0.3

DC Current Gain

hFE

VCE=-5V, IC= -1mA

100

250

600

Input resistance

3.29

4.7

6.11

kΩ

Transition frequency

VCE=-10V, IE=5mA, f=100MHz (Note)

250

MHz

Note: Transition frequency of the device

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