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UTD405-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

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UTD405-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UTD405
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-199.A
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
-18
A
Pulsed Drain Current
IDM
-40
A
Avalanche Current
IAR
-18
A
Repetitive Avalanche Energy(L=0.1mH)
EAR
40
mJ
Power Dissipation
PD
2.5
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
40
50
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =-250 µA
-30
V
Drain-Source Leakage Current
IDSS
VDS =-24 V, VGS =0 V
-0.003
-1
µA
Gate-Body Leakage Current
IGSS
VDS =0 V, VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-1.2
-2
-2.4
V
On state drain current
ID(ON)
VGS=-10V, VDS=-5V
-40
A
VGS =-10 V, ID =-18A
24.5
32
mΩ
Static Drain-Source On-Resistance
RDS(ON)
VGS =-4.5 V, ID =-10A
41
60
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
920
1100
pF
Output Capacitance
COSS
190
pF
Reverse Transfer Capacitance
CRSS
VDS =-15 V, VGS =0V, f=1MHz
122
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
18.7
23
nC
Gate-Source Charge
QGS
2.54
nC
Gate-Drain Charge
QGD
VDS =-15V, VGS =-10V, ID =-18 A
5.4
nC
Turn-ON Delay Time
tD(ON)
9
13
ns
Turn-ON Rise Time
tR
25
35
ns
Turn-OFF Delay Time
tD(OFF)
20
30
ns
Turn-OFF Fall-Time
tF
VGS=-10V,VDS=-15V, RL=0.82Ω,
RGEN=3Ω
12
18
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=-1A,VGS=0V
-0.76
-1
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
-18
A
Body Diode Reverse Recovery Time
tRR
IF=-18A, dI/dt=100A/μs
21.4
26
ns
Body Diode Reverse Recovery
Charge
QRR
IF=-18A, dI/dt=100A/μs
13
16
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle 0.5% max.



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