DTA124EL-AL3-R datasheet(2/3 Pages) UTC

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DTA124E

PNP EPITAXIAL SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD

2 of 3

www.unisonic.com.tw

QW-R206-044,D

ABSOLUATE MAXIUM RATINGS (TA = 25℃, unless otherwise specified.)

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA= 25℃)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input Voltage

VI(OFF)

VCC= -5V, IOUT= -100μA

-0.5

VI(ON)

VOUT= -0.2V, IOUT= -5mA

-3

Output Voltage

VO(ON)

IOUT/IIN= -10mA / -0.5 mA

-0.1

-0.3

Input Current

VIN= -5V

-0.36

Output Current

IO(OFF)

VCC= -50V , VIN=0V

-0.5

DC Current Gain

VOUT= -5V, IOUT= -5mA

Input Resistance

15.4

28.6

kΩ

Resistance Ratio

R2/R1

0.8

1.2

Transition Frequency

VCE= -10 V, IE = 5mA, f=100MHz (Note)

250

MHz

Note: Transition frequency of the device

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

Input Voltage

VIN

-40 ~ +10

Output Current

-100

-30

Power Dissipation

SOT-23/SOT-323

200

SOT-523

150

Junction Temperature

150

℃

Storage Temperature

TSTG

-40 ~ +150

℃

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