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UT4810DL-S08-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

tên linh kiện UT4810DL-S08-R
Giải thích chi tiết về linh kiện  N-CHANNEL 30-V (D-S) MOSFET WITH SCHOTTKY DIODE
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UT4810D
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R502-252
.A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
MOSFET
30
Drain-Source Voltage
Schottky
VDSS
30
V
Gate-Source Voltage
MOSFET
VGSS
±20
V
Continuous Drain Current (TJ=150°C)
MOSFET
ID
7.5
A
Pulsed Drain Current
MOSFET
IDM
50
A
Continuous Source Current
MOSFET
IS
1.25
A
Average Forward Current
Schottky
IF
2.4
A
Pulsed Forward Current
Schottky
IFM
40
A
Avalanche Current
IAS
25
A
Single-Pulse Avalanche Energy
L=0.1mH
EAS
78
mJ
MOSFET
1.38
Power Dissipation
Schottky
PD
1.31
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
MOSFET
73
90
Junction-to-Ambient
Schottky
θJA
77
95
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(MOSFET+ Schottky)
IDSS
VDS=30V, VGS=0V
0.007 0.100
mA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
On State Drain Current
ID(ON)
VDS≥5V, VGS=10V
20
A
VGS=10V, ID=10A
10.5
13.5
Static Drain-Source On-Resistance
RDS(ON)
VGS=4.5V, ID=5A
16
20
mΩ
DYNAMIC PARAMETERS
Gate Resistance
RG
0.2
0.55
0.9
Ω
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
17
30
ns
Turn-ON Rise Time
tR
13
20
ns
Turn-OFF Delay Time
tD(OFF)
45
90
ns
Turn-OFF Fall-Time
tF
VDD=15V, RL=15Ω, RG=6 Ω,
ID≈1 A, VGEN=10V
15
25
ns
Total Gate Charge
QG
14.5
22
nC
Gate Source Charge
QGS
6.3
nC
Gate Drain Charge
QGD
VDS=15V, VGS=5V, ID=10A
4.7
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=3.0 A, VGS =0 V
0.485 0.53
V
Body Diode Reverse Recovery Time
tRR
IF=3.0 A, dI/dt=100A/μs
36
70
ns



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