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UT4414G-S08-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

tên linh kiện UT4414G-S08-R
Giải thích chi tiết về linh kiện  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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UT4414
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-378.a
ABSOLUTE MAXIMUM RATING (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
TA =25°C
ID
8.5
A
Continuous Drain Current (Note 1)
TA =70°C
ID
7.1
A
Pulsed Drain Current (Note 1)
IDM
50
A
TA =25°C
3
W
Total Power Dissipation
TA =70°C
PD
2.1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
t ≤10s
31
40
°C/W
Junction to Ambient (Note 1)
Steady-State
θJA
59
75
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
30
V
Drain-Source Leakage Current
IDSS
VDS=24V,VGS=0V
0.004
1
µA
Gate-Source Leakage Current
IGSS
VDS=0V ,VGS=±20V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS= VGS, ID=250µA
1
1.9
3
V
On State Drain Current
ID(ON)
VGS=4.5V, VDS=5V
20
A
VGS=10V,ID=8.5A
20
26
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=5A
31
40
mΩ
Forward Transconductance
gFS
VDS=5V, ID=5A
10
17
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
680
820
pF
Output Capacitance
COSS
102
pF
Reverse Transfer Capacitance
CRSS
VDS=15V,VGS=0V,f =1MHz
77
pF
Gate Resistance
RG
VDS=0V,VGS=0V,f =1MHz
3
3.6
Ω
SWITCHING PARAMETERS
Total Gate Charge (10V)
QG
13.84
17
nC
Total Gate Charge (4.5V)
QG
6.74
8.1
nC
Gate-Source Charge
QGS
1.84
nC
Gate-Drain Charge
QGD
VDS=15V, VGS=10V, ID=8.5A
3.32
nC
Turn-ON Delay Time
tD(ON)
4.5
6.5
ns
Turn-ON Rise Time
tR
4.2
6.3
ns
Turn-OFF Delay Time
tD(OFF)
20.1
30
ns
Turn-OFF Fall Time
tF
VDS=15V,VGS=10V,RG=3Ω,
RL=1.8Ω
4.9
7.5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
4.3
A
Drain-Source Diode Forward Voltage
VSD
IS =1A, VGS=0V
0.76
1
V
Body Diode Reverse Recovery Time
tRR
IF=8.5A, dI/dt=100A/μs
17.2
21
ns
Body Diode Reverse Recovery Charge
QRR
IF=8.5A, dI/dt=100A/μs
8.6
10
nC
1.
The value of θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air
environment with TA=25°C. The value in any given application depends on the user's specific boar design.
The current rating is based on the t ≤ 10s thermal resistance rating.
2.
Repetitive Rating : Pulse width limited by TJ
Note:
3.
The θJA is the sum of the thermal impedance from junction to lead θJL and lead to ambient.



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