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UT4406-S08-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

tên linh kiện UT4406-S08-R
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UT4406-S08-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies

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UT4406
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 5
www.unisonic.com.tw
QW-R502-233.B
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current
ID
11.5
A
Pulsed Drain Current
IDM
80
A
Avalanche Current (Note 2)
IAV
25
A
Repetitive Avalanche Energy, L=0.1mH (Note 2)
EAV
78
mJ
Power Dissipation
TC=25°C
PD
3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
48
65
Junction-to-Case
θJC
12
16
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
30
V
Zero Gate Voltage Drain Current
IDSS
VDS=24V, VGS=0V
1
µA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±12V
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
0.8
1
1.5
V
On State Drain Current
ID(ON)
VDS=5V, VGS=4.5V
60
A
VGS=10V, ID=12A
11.5
14.8
VGS=4.5V, ID=10A
13.5
17.5
Static Drain-Source On-Resistance
RDS(ON)
VGS=2.5V, ID=8A
19.5
26.8
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
1630
pF
Output Capacitance
COSS
201
pF
Reverse Transfer Capacitance
CRSS
VDS=15V, VGS=0V, f=1MHz
142
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
4
ns
Turn-ON Rise Time
tR
5
ns
Turn-OFF Delay Time
tD(OFF)
32
ns
Turn-OFF Fall-Time
tF
VGS=10V, VDS=15V, RL=1.2Ω,
RG=3Ω
5
ns
Total Gate Charge
QG
18
nC
Gate Source Charge
QGS
2.5
nC
Gate Drain Charge
QGD
VDS=15V, VGS=4.5V, ID=11.5A
5.5
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=10A, VGS=0V
0.83
1
V
Maximum Body-Diode Continuous
Current
IS
4.5
A
Body Diode Reverse Recovery Time
tRR
IF=10A, dI/dt=100A/μs
18.7
ns
Body Diode Reverse Recovery
Charge
QRR
IF=10A, dI/dt=100A/μs
19.8
nC



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