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UT3310 bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện UT3310
Giải thích chi tiết về linh kiện  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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UT3310 bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UT3310
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-388.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
-20
V
Gate to Source Voltage
VGSS
±12
V
Continuous Drain Current (TA =25°C, VGS=10V)
ID
-10
A
Pulsed Drain Current
IDM
-24
A
Total Power Dissipation (TA =25°C)
PD
25
W
Linear Derating Factor
0.01
W/°C
Junction Temperature
TJ
150
℃
Ambient Operating Temperature
TOPR
-55 ~ +150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
110
°C/W
Junction to Case
θJC
5.0
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250µA
-20
V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°C, ID=-1mA
-0.1
V/°C
Drain-Source Leakage Current
IDSS
VDS=-20V,VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VDS=0V ,VGS=±12V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS= VGS, ID=-250µA
-0.5
V
VGS=-4.5V, ID=-2.8A
150
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=-2.5V, ID=-2.0A
250
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
300
pF
Output Capacitance
COSS
180
pF
Reverse Transfer Capacitance
CRSS
VDS=-6V,VGS=0V,f =1.0MHz
60
pF
SWITCHING PARAMETERS
Total Gate Charge (Note2)
QG
6
nC
Gate-Source Charge
QGS
1.5
nC
Gate-Drain Charge
QGD
VDS=-6V, VGS=-5V, ID=-2.8A
0.6
nC
Turn-ON Delay Time (Note2)
tD(ON)
25
ns
Turn-ON Rise Time
tR
60
ns
Turn-OFF Delay Time
tD(OFF)
70
ns
Turn-OFF Fall Time
tF
VDS=-6V,VGS=-5V, ID=-1A
RG=6Ω, RD=6Ω
60
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current ( Body Diode )
IS
VD=VG=0V , VS=-1.2V
-10
A
Pulsed Source Current ( Body Diode )
ISM
(Note1)
-24
A
Drain-Source Diode Forward Voltage
VSD
IS =-10A, VGS=0V (Note2)
-1.2
V
Notes:1. Pulse width limited by safe operating area.
2. Pulse width ≤300us , duty cycle ≤2%.



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