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UT3009G-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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UT3009G-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() UT3009 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-624.a ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V TC=25°C 78 A Continuous VGS@10V (Note 1) TC=100°C ID 55 A Drain Current Pulsed (Note 2) IDM 155 A Avalanche Current IAR 48 A Single Pulsed Avalanche Energy (Note 3) EAS 252 mJ Power Dissipation (TC=25°C) (Note 4) PD 53 W Junction Temperature TJ -55~175 °C Storage Temperature TSTG -55~175 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 1) θJA 62 °C/W Junction to Case (Note 1) θJC 2.8 °C/W Notes: 1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%. 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=48A. 4. The power dissipation is limited by 175°C junction temperature. |
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