UT2804

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-418.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

40

V

Gate-Source Voltage

±20

V

10

Continuous Drain Current

8

A

Pulsed Drain Current (Note 2)

40

A

32

Power Dissipation

22

W

Operating Junction Temperature

-55 ~ 150

°C

Storage Temperature

-55 ~ 150

°C

Note:

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by maximum junction temperature.

3. Duty cycle ≤ 1%

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

75

°C/W

Junction to Case

3

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

40

V

1

Drain-Source Leakage Current

10

µA

Gate-Source Leakage Current

±250 nA

On-State Drain Current (Note 1)

40

A

ON CHARACTERISTICS

Gate Threshold Voltage

1

1.5

2.5

V

30

42

Static Drain-Source On-State

Resistance (Note 1)

21

28

mΩ

Forward Transconductance (Note 1)

19

S

DYNAMIC PARAMETERS

Input Capacitance

790

pF

Output Capacitance

175

pF

Reverse Transfer Capacitance

65

pF

SWITCHING PARAMETERS (Note 2)

Total Gate Charge

16

nC

Gate to Source Charge

2.5

nC

Gate to Drain Charge

2.1

nC

Turn-ON Delay Time

2.2

4.4

ns

Rise Time

7.5

15

ns

Turn-OFF Delay Time

11.8 21.3

ns

Fall-Time

3.7

7.4

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

(Note 1)

1

V

Reverse Recovery Time

15.5

ns

Reverse Recovery Charge

7.9

nC

Continuous Current

1.3

A

Pulsed Current (Note 3)

2.6

A

Note: 1. Pulse test: Pulse Width ≤ 300µsec, Duty Cycle ≤ 2％.

2. Independent of operating temperature.

3. Pulse width limited by maximum junction temperature.