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UT2312L-AE3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện UT2312L-AE3-R
Giải thích chi tiết về linh kiện  20V N-CHANNEL ENHANCEMENT MODE MOSFET
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nhà sản xuất  UTC [Unisonic Technologies]
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UT2312L-AE3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

  UT2312L-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT2312L-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT2312L-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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UT2312
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-205.D
ABSOLUTE MAXIMUM RATINGS (Ta =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID
5
A
Pulsed Drain Current
IDM
15
A
Power Dissipation (Ta =25°C)
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction to Ambient
θJA
100
°C/W
ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =250 µA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20 V, VGS =0 V
1.0
µA
Gate–Body Leakage, Forward
IGSS
VGS =±8V, VDS = 0 V
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
0.45
V
VGS =4.5V, ID =5.0 A
25
33
mΩ
Static Drain–Source On–Resistance
RDS(ON)
VGS =2.5 V, ID =4.0 A
35
40
mΩ
On-State Drain Current
ID(ON)
VDS≥10 V, VGS = 4.5 V
15
A
Forward Transconductance
gFS
VDS = 5V, ID = 5.0 A
20
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
900
pF
Output Capacitance
COSS
140
pF
Reverse Transfer Capacitance
CRSS
VDS =10V, VGS =0V, f=1.0MHz
100
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
11
14
nC
Gate Source Charge
QGS
1.4
nC
Gate Drain Charge
QGD
VDS =10V, VGS =4.5V, ID =3.6A
2.2
nC
Turn-ON Delay Time
tD(ON)
15
25
ns
Turn-ON Rise Time
tR
40
60
ns
Turn-OFF Delay Time
tD(OFF)
48
70
ns
Turn-OFF Fall-Time
tF
VDD=10V, ID =1A, RL =10Ω
VGEN =4.5V, RG =6Ω
31
45
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=1.0 A,VGS=0 V
0.75
1.2
V
Max. Diode Forward Current
IS
1.6
A
Notes: Pulse test; pulse width ≤300μs, duty cycle≤2%



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