UT2308G-AE3-R datasheet(2/3 Pages) UTC

2 / 3 page

UT2308

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-128.d

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±10

Continuous Drain Current

2.7

Power Dissipation

1.25

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =250 µA

Drain-Source Leakage Current

IDSS

VDS =20 V, VGS =0 V

1.0

µA

Gate-Source Leakage Current

IGSS

VDS =0 V, VGS = ±10V

±100

ON CHARACTERISTICS

Gate-Threshold Voltage

VGS(TH)

VDS =VGS, ID =250 µA

0.4

0.8

1.0

VGS =4.5 V, ID =1A

mΩ

Static Drain-Source On-State

Resistance (Note2)

RDS(ON)

VGS =2.5 V, ID =1A

110

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

215

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Total Gate Charge

3.8

Gate Source Charge

QGS

0.7

Gate-Drain Charge

QGD

VGS=4.5V

0.9

Note:1. Pulse width limited by TJ(MAX)

2. Pulse width≤300μs, duty cycle≤2%.

3. Surface mounted on FR4 board t≤5 sec.

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