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UT2305G-AE3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện UT2305G-AE3-R
Giải thích chi tiết về linh kiện  4.2A, 20V P-CHANNEL POWER MOSFET
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UT2305G-AE3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UT2305
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-133.F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNITS
Drain-Source Voltage
VDS
- 20
V
Gate-Source Voltage
VGS
± 12
V
Continuous Drain Current (Note 3) (TA=25°C)
ID
-4.2
A
Pulsed Drain Current (Note 1, 2)
IDM
-10
A
Power Dissipation (TA=25°C)
SOT-23-3
PD
0.83
W
SOT-23
1.38
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient (Note 3)
SOT-23-3
θJA
150
°C/W
SOT-23
90
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250μA
-20
V
Drain-Source Leakage Current
IDSS
VDS=-20V, VGS=0V
-1
μA
Gate-Source Leakage Current
IGSS
VGS=±12V, VDS=0V
±100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25°C, ID=-1mA
-0.1
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.5
-1.2
V
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=-10V, ID=-4.5A
53
mΩ
VGS=-4.5V, ID=-4.2A
65
mΩ
VGS=-2.5V, ID=-2.0A
100
mΩ
VGS=-1.8V, ID=-1.0A
250
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VGS=0V, VDS=-15V, f=1MHz
740
pF
Output Capacitance
COSS
167
pF
Reverse Transfer Capacitance
CRSS
126
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 2)
tD(ON)
VDS=-15V, VGS=-10V,
ID=-4.2A, RG=6Ω, RD=3.6Ω
5.9
ns
Turn-ON Rise Time
tR
3.6
ns
Turn-OFF Delay Time
tD(OFF)
32.4
ns
Turn-OFF Fall Time
tF
2.6
ns
Total Gate Charge (Note 2)
QG
VDS=-16V, VGS=-4.5V,
ID=-4.2A
10.6
nC
Gate-Source Charge
QGS
2.32
nC
Gate-Drain Charge
QGD
3.68
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS=0V, IS=-1.2A
-1.2
V
Reverse Recovery Time
trr
VGS=0V, IS=-4.2A,
dI/dt=100A/μs
27.7
ns
Reverse Recovery Charge
QRR
22
nC
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300μs, duty cycle≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board; 270°C/W when mounted on min.



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