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UT136N03L-TA3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

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UT136N03
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-459.a
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
136
A
Pulsed Drain Current (Note1)
IDM
400
A
Single Pulsed Avalanche Energy (Note4)
EAS
875
mJ
Power Dissipation
PD
100
W
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
1.4
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
30
V
Drain-Source Leakage Current
IDSS
VDS=30 V,VGS =0 V
1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20 V
±100
nA
ON CHARACTERISTICS
(Note2)
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
3
V
VGS =10 V, ID =40 A
3.6
4.5
Static Drain-Source On-Resistance
RDS(ON)
VGS =4.5 V, ID =40 A
5.6
mΩ
DYNAMIC PARAMETERS
(Note3)
Input Capacitance
CISS
3800
Output Capacitance
COSS
800
Reverse Transfer Capacitance
CRSS
VDS =15V, VGS =0V, f=1.0MHz
600
pF
SWITCHING PARAMETERS
(Note3)
Total Gate Charge
QG
60
72
Gate Source Charge
QGS
20.8
Gate Drain Charge
QGD
VDS =15V, VGS =5V, ID =16A
22
nC
Turn-ON Delay Time
tD(ON)
25.7
50
Turn-ON Rise Time
tR
10
20
Turn-OFF Delay Time
tD(OFF)
128
200
Turn-OFF Fall-Time
tF
VDD=15V, ID =1A, RGEN =6Ω
VGS =10 V
34
70
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=20 A,VGS=0 V
1.5
V
Drain-Source Diode Forward Current
IS
90
A
Note : 1. Pulse width limited by maximum junction temperature
2. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
3. Guaranteed by design, not subject to production testing.
4. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C.



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