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UT136EL-X-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện UT136EL-X-TN3-R
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nhà sản xuất  UTC [Unisonic Technologies]
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UT136EL-X-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UT136E
Preliminary
TRIAC
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R401-017, F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Off-State Voltages
UT136E-5
VDRM
500 (Note 2)
V
UT136E-6
600 (Note 2)
V
UT136E-8
800
V
RMS On-State Current (full sine wave, TMB ≤107°C)
IT(RMS)
4
A
Non-Repetitive Peak On-State Current
(Full sine wave; TJ=25°C prior to surge)
t =20ms
ITSM
25
A
t =16.7ms
27
A
I
2t for fusing (t =10ms)
I
2t
3.1
A
2s
Repetitive Rate of Rise
of On-State Current
After Triggering
ITM=6A,
IG=0.2A,
dIG/dt=0.2A/μs
T2+ G+
dIT/dt
50
A/μs
T2+ G-
50
A/μs
T2- G-
50
A/μs
T2- G+
10
A/μs
Peak Gate Voltage
VGM
5
V
Peak Gate Current
IGM
2
A
Peak Gate Power
PGM
5
W
Average Gate Power (over any 20 ms period)
PG(AV)
0.5
W
Junction Temperature
TJ
125
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic may
switch to the on-state. The rate of rise of current should not exceed 3A/μs.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
Pcb Mounted
TO-220
θJA
60
K/W
TO-252
75
Junction to Mounting Base
Full Cycle
θJB
3.0
K/W
Half Cycle
3.7
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
STATIC
Gate Trigger Current
IGT
VD=12V, IT=0.1A
T2+ G+
2.5
10
mA
T2+ G-
4.0
10
mA
T2- G-
5.0
10
mA
T2- G+
11
25
mA
Latching Current
IL
VD=12V, IGT=0.1A
T2+ G+
3.0
15
mA
T2+ G-
10
20
mA
T2- G-
2.5
15
mA
T2- G+
4.0
20
mA
Holding Current
IH
VD=12V, IGT=0.1A
2.2
15
mA
On-State Voltage
VT
IT=5A
1.4
1.7
V
Gate Trigger Voltage
VGT
VD=12V, IT=0.1A
0.7
1.5
V
VD=400V, IT=0.1A, TJ=125°C
0.25
0.4
V
Off-State Leakage Current
ID
VD=VDRM(MAX), TJ=125°C
0.1
0.5
mA
DYNAMIC
Critical Rate of Rise of Off-State
Voltage
dVD/dt
VDM=67%VDRM(max), TJ=125°C,
exponential waveform; gate open circuit
50
V/μs
Gate Controlled Turn-On Time
tGT
ITM=6A, VD=VDRM(MAX), IG=0.1A, dIG/dt=5A/μs
2
μs



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