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UT40N03TG-TM3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện UT40N03TG-TM3-R
Giải thích chi tiết về linh kiện  30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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UT40N03TG-TM3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UT40N03T
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-172.D
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±25
V
Continuous Drain Current
ID
28
A
Pulsed Drain Current
IDM
95
A
TO-220/TO-263
45
Total Power Dissipation
TO-251/ TO-252
PD
41
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220/TO-263
62
Junction to Ambient
TO-251/ TO-252
θJA
100
℃
/W
TO-220/TO-263
2.73
Junction to Case
TO-251/ TO-252
θJC
3
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250µA
30
V
Drain-Source Leakage Current
IDSS
VDS=30V,VGS =0V,TJ =25°C
1
µA
Gate-Source Leakage Current
IGSS
VGS = ±25 V
±100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Reference to 25℃, ID=1mA
0.032
V/°C
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
3
V
VGS =10 V, ID =18 A
25
Drain-Source On-State Resistance
RDS(ON)
VGS =4.5 V, ID =14 A
45
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
655
Output Capacitance
COSS
145
Reverse Transfer Capacitance
CRSS
VDS=25V, VGS =0V,
f=1.0MHz
95
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
6
Turn-ON Rise Time
tR
62
Turn-OFF Delay Time
tD(OFF)
16
Turn-OFF Fall-Time
tF
VGS=10V,VDS=15V,
RD=0.83Ω, ID =18 A,
RG =3.3 Ω
4.4
ns
Total Gate Charge
QG
8.8
Gate-Source Charge
QGS
2.5
Gate-Drain Charge
QGD
VDS =20V, VGS =4.5V,
ID =18A
5.8
nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=28 A, VGS=0V
1.3
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
VD=VG=0V , VS=1.3V
28
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
95
A
Notes: 1. Pulse width limited by TJ(MAX).
Notes: 2. Pulse width ≤ 300us, duty cycle ≤ 2%.



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