UT30P04

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R502-465.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-40

V

Gate-Source Voltage

±20

V

-21

Continuous Drain Current

-17

Pulsed Drain Current (Note 2)

-70

Avalanche Current

-27

A

Avalanche Energy (Note 3)

L=0.1mH

36

mJ

30

Power Dissipation

20

W

Operating Junction Temperature

-55~150

°C

Storage Temperature

-55~150

°C

Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by maximum junction temperature.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

40

°C/W

Junction to Case

4.1

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

-40

V

1

Drain-Source Leakage Current

10

µA

Gate- Source Leakage Current

±250 nA

On-State Drain Current (Note 1)

-70

A

ON CHARACTERISTICS

Gate Threshold Voltage

-1

-2.5

-3

V

65

73

35

50

Static Drain-Source On-State

Resistance (Note 1)

30

40

mΩ

Forward Transconductance (Note 1)

20

S

Gate Resistance

4.95

Ω

DYNAMIC PARAMETERS

Input Capacitance

1090

Output Capacitance

175

Reverse Transfer Capacitance

91

pF

SWITCHING PARAMETERS

(Note 2)

17

Total Gate Charge

8.5

Gate to Source Charge

5.5

Gate to Drain Charge

3

nC

Turn-ON Delay Time

6

ns

Rise Time

16

ns

Turn-OFF Delay Time

26

ns

Fall-Time

10

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Continuous Current

-21

A

Drain-Source Diode Forward Voltage

1

-1.2

V

Reverse Recovery Time

15.5

ns

Reverse Recovery Charge

7.9

nC

Note: 1. Pulsde test: Pulse width ≤300µsec, duty cycle ≤2%.

2. Independent of operating temperature.