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UT30N03G-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

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UT30N03G-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UT30N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-140.A
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
30
A
Pulsed Drain Current
IDM
40
A
Avalanche Energy
EAS
90
mJ
Power Dissipation
PD
50
W
Junction Temperature
TJ
+175
℃
Storage Temperature
TSTG
-55 ~ +175
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
50
℃
/W
Junction-to-Case
θJC
3.0
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
30
V
Drain-Source Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
1
μA
Gate-Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
1.0
V
VGS = 10 V, ID = 15 A
20
30
mΩ
Static Drain-Source On-State Resistance
(Note2)
RDS(ON)
VGS = 4.5 V, ID = 12.5 A
30
45
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1170
pF
Output Capacitance
COSS
320
pF
Reverse Transfer Capacitance
CRSS
VDS = 25 V, VGS = 0 V, f = 1MHz
60
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
10
20
ns
Turn-On Rise Time
tR
10
20
ns
Turn-Off Delay Time
tD(OFF)
25
40
ns
Turn-Off Fall Time
tF
VDD = 15V, ID ≒ 30A, RL = 0.5Ω,
VGS=10V, RG=7.5Ω
(Note 4, 5)
15
30
ns
Total Gate Charge
QG
18
35
nC
Gate-Source Charge
QGS
5.5
nC
Gate-Drain Charge
QGD
VDS= 15V, ID= 30A, VGS= 10 V
(Note 4, 5)
2
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IF = 30A
1.1
1.5
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
30
A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
40
A
Reverse Recovery Time
tRR
IF=30A, dIF/dt=100A/μs
50
100
ns
Notes: 1. Guaranteed by design, not subject to production testing.
2. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
3. Essentially independent of operating temperature



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