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UT30P03L-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

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UT30P03
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-335.b
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
-26
A
Power Dissipation
PD
50
W
Junction Temperature
TJ
+175
°C
Storage Temperature
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
50
°C/W
Junction to Case
θJC
3
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID =-250 μA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-30V, VGS=0V
-1
μA
Gate-Source Leakage Current
IGSS
VGS=±20V, VDS=0V
±100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250 μA
-1
-3
V
VGS=-10V, ID =-10A
30
40
mΩ
Static Drain-Source On-State Resistance
(Note)
RDS(ON)
VGS=-4.5V, ID =-10A
40
60
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
700
pF
Output Capacitance
COSS
130
pF
Reverse Transfer Capacitance
CRSS
VDS =-25V, VGS=0V, f=1.0MHz
120
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
25
ns
Turn-On Rise Time
tR
50
ns
Turn-Off Delay Time
tD(OFF)
380
ns
Turn-Off Fall Time
tF
VDS =-15V, ID=1A, RL = 15Ω,
VGS=-10V, RG=3.3Ω
180
ns
Total Gate Charge
QG
100
nC
Gate-Source Charge
QGS
15
nC
Gate-Drain Charge
QGD
VDS= -24V, ID= -30A, VGS= -4.5V
10
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS =-10A
-1.2
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-26
A
Note: Pulse Test: Pulse width≤300μs, Duty cycle≤2%



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