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UT12N10L-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

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Giải thích chi tiết về linh kiện  12 Amps, 100 Volts N-CHANNEL POWER MOSFET
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UT12N10L-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UT12N10
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-508.b
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
12
A
Drain Current
Pulsed (Note 1)
IDM
44
A
Power Dissipation
PD
43
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note:
Note:1
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Repetitive Rating: Pulse width limited by maximum junction temperature
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 2)
θJA
50
°C/W
Junction to Case
θJC
3.5
°C/W
Note:
Note:2
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins.
θJC is guaranteed by design while θJA is determined by the user’s board design.
When mounted on a 1 in
2 pad of 2 oz copper



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