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UT12N10L-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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UT12N10L-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 4 page ![]() UT12N10 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-508.b ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous ID 12 A Drain Current Pulsed (Note 1) IDM 44 A Power Dissipation PD 43 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Note:1 Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Repetitive Rating: Pulse width limited by maximum junction temperature THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 2) θJA 50 °C/W Junction to Case θJC 3.5 °C/W Note: Note:2 θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. θJC is guaranteed by design while θJA is determined by the user’s board design. When mounted on a 1 in 2 pad of 2 oz copper |
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