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USS5350L-AB3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện USS5350L-AB3-R
Giải thích chi tiết về linh kiện  50V,3A PNP LOW VCE(SAT) TRANSISTOR
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nhà sản xuất  UTC [Unisonic Technologies]
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USS5350L-AB3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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USS5350
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R223-005.C
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
DC
IC
-3
A
Collector Current (Note 3)
Peak
ICM
-5
A
Base Current (DC)
IB
-0.5
A
SOT-89
1.4
Power Dissipation ( TA≤25°C) (Note 2)
SOT-223
PD
2
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-65~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device mounted on a printed-circuit board; single-sided copper; mounting pad for collector 6cm
2.
3. Pulse test: tP ≤300 μs; Duty cycle≤2%.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
SOT-89
90
Junction To Ambient (Note 2)
SOT-223
θJA
62.5
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
VCB = -50 V, IE = 0
-100
nA
Collector Cut-Off Current
ICBO
VCB = -50 V, IE = 0, TJ = 150°C
-50
μA
Collector Cut-Off Current
ICES
VCE = -50 V, VBE = 0
-100
nA
Emitter Cut-Off Current
IEBO
VEB = -5 V, IC = 0
-100
nA
IC = -0.5 A, IB = -50 mA
-90
mV
IC = -1 A, IB = -50 mA
-180
mV
IC = -2 A, IB = -100 mA
-320
mV
IC = -2 A, IB = -200 mA (Note)
-270
mV
Collector-Emitter Saturation Voltage
VCE(SAT)
IC = -3 A, IB = -300 mA (Note)
-390
mV
IC = -2 A, IB = -100 mA
-1.1
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC = -3 A, IB = -300 mA (Note)
-1.2
V
Base-Emitter Turn-On Voltage
VBE(ON) VCE = -2 V, IC = -1 A
-1.1
V
VCE=-2V, IC = -0.1 A
200
VCE=-2V, IC =-0.5 A
200
VCE=-2V, IC = -1 A (Note)
200
450
VCE=-2V, IC = -2 A (Note)
130
Dc Current Gain
hFE
VCE=-2V, IC = -3 A (Note)
80
Equivalent On-Resistance
RCE(SAT) IC = -2 A, IB = -200 mA, (Note)
90
135
mΩ
Transition Frequency
fT
VCE = -5 V , IC = -100 mA, f= 100 MHz
100
MHz
Collector Capacitance
CC
VCB = -10 V, IE = ie = 0, f = 1 MHz
35
pF
Note: Pulse test: tP ≤300 μs; Duty cycle≤2%.



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