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UP1855AL-X-AA3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện UP1855AL-X-AA3-R
Giải thích chi tiết về linh kiện  HIGH CURRENT TRANSISTOR
PDF  4 Pages
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nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
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UP1855AL-X-AA3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

  UP1855AL-X-AA3-R Datasheet HTML 1Page - Unisonic Technologies UP1855AL-X-AA3-R Datasheet HTML 2Page - Unisonic Technologies UP1855AL-X-AA3-R Datasheet HTML 3Page - Unisonic Technologies UP1855AL-X-AA3-R Datasheet HTML 4Page - Unisonic Technologies  
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UP1855A
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R207-020.D
ABSOLUATE MAXIUM RATINGS (Ta = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
VCBO
-180
V
Collector -Emitter Voltage
VCEO
-170
V
Emitter -Base Voltage
VEBO
-6
V
Collector Current (Pulse)
ICM
-10
A
Collector Current (DC)
IC
-4
A
Power Dissipation
PD
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC = -100µA
-180
-210
V
Collector-Emitter Breakdown Voltage
BVCEO
IC = -10mA
-170
V
Emitter-Base Breakdown Voltage
BVEBO
IE = -100µA
-6
-8
V
VCB=-150V
-50
nA
Collector Cut-off Current
ICBO
VCB=-150V, Ta=100°C
-1
µA
Emitter Cut-off Current
IEBO
VEB=-6V
-10
nA
IC=-100mA, IB=-5mA
-30
-60
mV
IC=-500mA, IB=-50mA
-70
-120
mV
IC=-1A, IB=-100mA
-110
-150
mV
Collector-Emitter Saturation Voltage
VCE (SAT)
IC=-3A, IB=-300mA
-275
-550
mV
Base-Emitter Saturation Voltage
VBE (SAT) IC=-3A, IB=-300mA
-970
-1110
mV
Base-Emitter Turn-On Voltage
VBE (ON)
IC=-3A, VCE=-5V
-830
-950
mV
hFE1
IC=-10mA, VCE=-5V
100
200
hFE2
IC=-1A, VCE=-5V
100
300
hFE3
IC=-3A, VCE=-5V
28
140
DC Current Gain
hFE4
IC=-10A, VCE=-5V
10
Transition Frequency
fT
IC=-100mA, VCE=-10V, f=50MHz
110
MHz
Output Capacitance
Cob
VCB=-20V, f=1MHz
40
pF
tON
IC=-1A, VCC=-50V
68
ns
Switching Times
tOFF
IB1=-100mA, IB2=100mA
1030
ns
Note: Pulse test: tP ≤ 300µs, Duty cycle ≤2%
CLASSIFICATION OF hFE3
RANK
A
B
RANGE
28~75
75(MIN.)



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