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UP1855L-X-AA3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện UP1855L-X-AA3-R
Giải thích chi tiết về linh kiện  HIGH CURRENT TRANSISTOR
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nhà sản xuất  UTC [Unisonic Technologies]
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UP1855L-X-AA3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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UP1855
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R207-011.G
ABSOLUATE MAXIUM RATINGS (T
a = 25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-180
V
Collector-Emitter Voltage
VCEO
-140
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
ICM
-10
A
Continuous Collector Current
IC
-4
A
Power Dissipation (Ta = 25°C ) (Note 2)
PD
3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with
copper equal to 4 square inch minimum
ELECTRICAL CHARACTERISTICS (T
a= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC = -100µA
-180
-210
V
Collector-Emitter Breakdown Voltage
BVCEO
IC = -10mA
-140
-170
V
Emitter-Base Breakdown Voltage
BVEBO
IE = -100µA (Note)
-6
-8
V
VCB=-150V
-50
nA
Collector Cut-off Current
ICBO
VCB=-150V, Ta=100°C
-1
µA
Emitter Cut-off Current
IEBO
VEB=-6V
-10
nA
IC=-100mA, IB=-5mA (Note)
-30
-60
mV
IC=-500mA, IB=-50mA (Note)
-70
-120
mV
IC=-1A, IB=-100mA (Note)
-110
-150
mV
Collector-Emitter Saturation Voltage
VCE (SAT)
IC=-3A, IB=-300mA (Note)
-275
-550
mV
Base-Emitter Saturation Voltage
VBE (SAT) IC=-3A, IB=-300mA (Note)
-970
-1110
mV
Base-Emitter Turn-On Voltage
VBE (ON)
VCE=-5V , IC=-3A (Note)
-830
-950
mV
hFE1
VCE=-5V , IC=-10mA (Note)
100
200
hFE2
VCE=-5V , IC=-1A (Note)
100
300
hFE3
VCE=-5V , IC=-3A (Note)
28
140
DC Current Gain
hFE4
VCE=-5V , IC=-10A (Note)
10
Transition Frequency
fT
VCE=-10V , IC=-100mA, f=50MHz
110
MHz
Output Capacitance
Cob
VCB=-20V, f=1MHz
40
pF
tON
VCC=-50V, IC=-1A
68
ns
Switching Times
tOFF
IB1=-100mA, IB2=100mA
1030
ns
Note: Pulse test: tP ≤300µs, Duty cycle ≤2%
CLASSIFICATION OF hFE3
RANK
A
B
RANGE
28~75
75(MIN.)



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