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UP1753L-AA3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện UP1753L-AA3-R
Giải thích chi tiết về linh kiện  HIGH CURRENT LOW VCE(SAT) TRANSISTOR
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nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
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UP1753L-AA3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

  UP1753L-AA3-R Datasheet HTML 1Page - Unisonic Technologies UP1753L-AA3-R Datasheet HTML 2Page - Unisonic Technologies UP1753L-AA3-R Datasheet HTML 3Page - Unisonic Technologies UP1753L-AA3-R Datasheet HTML 4Page - Unisonic Technologies  
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UP1753
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R220-020.C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
200
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6
V
Peak Pulse Current
ICM
10
A
Continuous Collector Current
IC
6
A
Power Dissipation (TA =25℃)
PD
3
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100µA
200
300
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=10mA (Note1)
100
120
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100µA
6
8
V
Collector Cut-Off Current
ICBO
VCB=150V
10
nA
Collector Cut-Off Current
ICER
VCE=150V, R≤1KΩ
10
nA
Emitter Cut-Off Current
IEBO
VEB=6V
10
nA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=0.1A, IB=5mA (Note1)
50
mV
IC=2A, IB=100mA (Note1)
150
IC=5A, IB=500mA (Note1)
330
Base-Emitter Saturation Voltage
VBE(SAT) IC=5A, IB=500mA (Note1)
1250
mV
Base-Emitter Turn-On Voltage
VBE(ON) IC=5A, VCE =2V (Note1)
1100
mV
Static Forward Current Transfer Ratio
hFE
IC=10mA, VCE =2V
100
200
IC=2A, VCE =2V (Note1)
100
200
300
IC=4A, VCE =2V (Note1)
50
100
IC=10A, VCE =2V (Note1)
20
Transition Frequency
fT
IC=100mA, VCE =10V f=50MHz
100
MHz
Output Capacitance
COB
VCB=10V, f=1MHz
38
pF
Switching Times
tON
IC=1A, VCC =10V
IB1=IB2=100mA
50
ns
tOFF
1600
ns
Note: 1.Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%,



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