UK3919

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-200.A

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

25

V

Gate to Source Voltage

±20

V

Continuous Drain Current

±64

A

Pulsed Drain Current (Note1)

±256

A

Single Avalanche Current (Note2)

27

A

Single Avalanche Energy (Note2)

73

mJ

Total Power Dissipation

36

W

Storage Temperature

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP

MAX

UNIT

OFF CHARACTERISTICS

Zero Gate Voltage Drain Current

10

µA

Gate-Body Leakage Current

±100

nA

ON CHARACTERISTICS

Gate-Threshold Voltage

2.0

2.5

3.0

V

4.5

5.6

Drain-Source On-Resistance

6.8

13.7

mΩ

DYNAMIC PARAMETERS

Input Capacitance

2050

Output Capacitance

460

Reverse Transfer Capacitance

330

pF

SWITCHING PARAMETERS

Gate to Source Charge

42

Gate Charge at Threshold

8

Gate to Drain Charge

15

nC

Turn-ON Delay Time

16

Turn-ON Rise Time

19

Turn-OFF Delay Time

53

Turn-OFF Fall-Time

22

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Body Diode Forward Voltage

0.97

V

Reverse Recovery Time

23

ns

Reverse Recovery Charge

11

nC

Notes: 1. PW ≤ 10 μs, Duty Cycle ≤ 1%