UF830L-TQ2-R datasheet(3/8 Pages) UTC

3 / 8 page

UF830

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-046,G

ELECTRICAL SPECIFICATIONS(Cont.) (TA =25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Total Gate Charge

VGS=10V, ID=4.5A

VDS=0.8×Rated BVDSS

IG(REF)=1.5mA (Note 3)

Gate-Source Charge

QGS

3.5

Gate-Drain Charge

QGD

Input Capacitance

CISS

VDS=25V, VGS=0V, f=1.0MHz

600

Output Capacitance

COSS

100

Reverse Transfer Capacitance

CRSS

Note: 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.

2. MOSFET Switching Times are Essentially Independent of Operating Temperature.

3. Gate Charge is Essentially Independent of Operating Temperature.

INTERNAL PACKAGE INDUCTANCE

PARAMETER

SYMBOL

MIN

TYP MAX UNIT

Internal Drain Inductance

Measured from the contact screw on tab to center of die

3.5

Measured from the drain lead(6mm from package) to center of die

4.5

Internal Source Inductance

Measured from the source lead(6mm from header) to source bond pad

7.5

Remark:

Modified MOSFET symbol showing the internal devices inductances as below.

SOURCE TO DRAIN DIODE SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Source to Drain Diode Voltage

VSD

TJ=25°C,ISD=4.5A, VGS=0V(Note 1)

1.6

Continuous Source to Drain Current

ISD

Note 2

5.5

Pulse Source to Drain Current

ISDM

Reverse Recovery Time

trr

TJ=25°C, ISD=4.5A, dI/dt=100A/μs

180

350

760

Reverse Recovery Charge

QRR

TJ=25°C, ISD=4.5A, dI/dt=100A/μs

0.96

2.2

4.3

μC

NOTE : 1. Pulse Test: Pulse width≤300μs, Duty Cycle≤2%.

2. Modified MOSFET symbol showing the integral reverse P-N junction diode as below.

UF830L-TQ2-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

UF830L-TQ2-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL