UFR9120G-TN3-R datasheet(3/6 Pages) UTC

3 / 6 page

UFR9120

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-570.a

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=250µA, VGS=0V

-100

Breakdown Voltage Temperature

Coefficient

△

DSS/T

△ J Reference to 25°C, ID=-1mA

-0.11

V/°C

VDS=-100V, VGS=0V

-25

Drain-Source Leakage Current

IDSS

VDS=-80V, VGS=0V , TJ=150°C

-250

µA

Forward

VGS=+20V

+100 nA

Gate- Source Leakage Current

Reverse

IGSS

VGS=-20V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-2.0

-4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-3.9A

0.48

Ω

DYNAMIC PARAMETERS

Input Capacitance

CISS

350

Output Capacitance

COSS

110

Reverse Transfer Capacitance

CRSS

VGS=0V, VDS=-25V, f=1.0MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

QGS

5.0

Gate to Drain Charge

QGD

VGS=-10V, VDS=-80V, ID=-4.0A

(Note 1, 2)

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

VDD=-50V, ID= -4.0A, RG= 12Ω,

RD=12Ω (Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

-6.6

Maximum Body-Diode Pulsed

Current (Note 1)

ISM

MOSFET symbol showing the

integral reverse p-n junction diode

-26

Drain-Source Diode Forward Voltage

VSD

IS=-3.9A, VGS=0V, TJ =25°C

-2.0

Body Diode Reverse Recovery Time

tRR

100 150

Body Diode Reverse Recovery Charge

QRR

IF=-4.0A, VGS=0V, di/dt = 100A/µs,

TJ =25°C (Note 1)

420 630

Notes: 1. Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

2. Essentially independent of operating temperature.

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