UD4809-TN3-R datasheet(2/5 Pages) UTC

2 / 5 page

UD4809

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-177.A

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 3)

9.0

Drain to Source dv/dt

dv/dt

6.0

V/ns

Power Dissipation (Note 3)

1.3

Junction Temperature

+150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Junction-to-Ambient (Note 3)

θJA

116

℃

Junction-to-Case

θJC

2.9

℃

ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS =0 V, ID =250µA

Drain-Source Leakage Current

IDSS

VDS =24V, VGS =0 V

1.0

µA

Gate-Source Leakage Current

IGSS

VDS =0 V, VGS = ±20V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS =VGS, ID =250 µA

1.5

2.5

ID =30 A

7.0

9.0

VGS =10~11.5 V

ID =15 A

7.0

mΩ

ID =30 A

Static Drain-Source On-Resistance

(Note 2)

RDS(ON)

VGS =4.5 V

ID =15 A

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

1456

Output Capacitance

COSS

315

Reverse Transfer Capacitance

CRSS

VDS =12 V, VGS =0V, f=1MHz

200

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

12.3

Turn-ON Rise Time

21.3

Turn-OFF Delay Time

tD(OFF)

15.1

Turn-OFF Fall-Time

VGS=4.5V,VDS=15V, ID =15A,

RG =3.0Ω

5.3

Turn-ON Delay Time

tD(ON)

7.0

Turn-ON Rise Time

22.7

Turn-OFF Delay Time

tD(OFF)

25.3

Turn-OFF Fall-Time

VGS=11.5V,VDS=15V, ID =15A,

RG =3.0Ω

2.8

Total Gate Charge

QG(TOT)

Threshold Gate Charge

QG(TH)

2.5

Gate-Source Charge

QGS

4.8

Gate-Drain Charge

QGD

VDS =15V, VGS =4.5V, ID =30A

5.0

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

IS=30A,VGS=0V

0.95

1.2

Source Current (Body Diode)

Reverse Recovery Time

tRR

19.5

Reverse Recovery Time

QRR

VGS = 0 V, dIs/dt= 100 A/ s,

IS = 30 A

9.2

Note: 1. Pulse width limited by TJ(MAX)

2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.

3. Surface-mounted on FR4 board using the minimum recommended pad size.

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