UD4P20L-S08-R datasheet(3/4 Pages) UTC

3 / 4 page

UD4P20

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-345.c

ABSOLUTE MAXIMUM RATINGS (unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (VGS =0V)

VDSS

-20

Drain-Gate Voltage (RGS = 20kΩ)

VDGR

-20

Gate-Source Voltage

VGSS

±16

Continuous Drain Current

(TC =25°C, Single Operation)

-4

Pulsed Drain Current (Note 2)

IDM

-16

Power Dissipation (TC=25°C)

Dual Operation

1.6

Single Operation

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

Single Operation

θJA

62.5

°C/W

Dual Operation

°C/W

Note: When Mounted on 0.5 in

2 pad of 2oz. copper

ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID = -250μA, VGS = 0 V

-20

Drain-Source Leakage Current

IDSS

VDS =-20 V, VGS =0 V

-1

µA

Gate- Source Leakage Current

IGSS

VGS = ±16 V, VDS=0 V

±100

ON CHARACTERISTICS

(Note 1)

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = -250μA

-1

-1.6

-2.5

Static Drain-Source On-State Resistance

RDS(ON)

VGS =-10 V, ID =-2A

mΩ

VGS =-4.5 V, ID =-2A

100

mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS =-25 V, VGS =0 V

f=1MHz

1350

Output Capacitance

COSS

490

Reverse Transfer Capacitance

CRSS

130

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

VDD=-15V, ID=-2A ,

VGS=-4.5 V, RG=4.7 Ω

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

125

Turn-OFF Fall-Time

Total Gate Charge

VDD =-24 V, VGS =-5 V

ID =-4 A

12.5

Gate Source Charge

QGS

Gate Drain Charge

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note 1)

VSD

ISD =-4 A, VGS =0 V

-1.2

Maximum Continuous Drain-Source Diode

Forward Current

ISD

-4

Maximum Pulsed Drain-Source Diode

Forward Current (Note 2)

ISDM

-16

Reverse Recovery Time

trr

ISD=-4A, VDD=-15V

dI/dt =100A/μs, TJ=150°C

Reverse Recovery Charge

QRR

Notes: 1. Pulsed: Pulse duration =300μS, duty cycle≤1.5 %.

2. Pulse width limited by safe operating area.

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