9018

NPN EPITAXIAL PLANAR TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 2

www.unisonic.com.tw

QW-R201-025,Ba

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

30

V

Collector-Emitter Voltage

15

V

Emitter-Base Voltage

5

V

Collector Current

50

mA

Collector Power Dissipation

Pc

400

mW

Junction Temperature

125

℃

Operating Temperature

-20 ~ +85

℃

Storage Temperature

-40 ~ +150

℃

Note:

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

30

V

Collector-Emitter Breakdown Voltage

15

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-Off Current

50

nA

Collector-Emitter Saturation Voltage

0.5

V

DC Current Gain

28

100

198

Current Gain Bandwidth Product

700

1100

MHz

Output Capacitance

1.3

1.7

pF

RANK

D

E

F

G

H

I

RANGE

28-45

39-60

54-80

72-108

97-146

132-198

UTC assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or

other parameters) listed in products specifications of any and all UTC products described or contained

herein. UTC products are not designed for use in life support appliances, devices or systems where

malfunction of these products can be reasonably expected to result in personal injury. Reproduction in

whole or in part is prohibited without the prior written consent of the copyright owner. The information

presented in this document does not form part of any quotation or contract, is believed to be accurate

and reliable and may be changed without notice.