TF202G-X-AC3-R datasheet(2/4 Pages) UTC

2 / 4 page

TF202

N-CHANNEL JFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R210-001.F

ABSOLUTE MAXIMUM RATINGS ( TA=25°С, unless otherwise specified )

PARAMETER

SYMBOL

RATING

UNIT

Gate Drain Voltage

VGDO

-20

Gate Current

Drain Current

Power Dissipation

100

Junction Temperature

150

°С

Storage Temperature

TSTG

-55~+150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Gate Drain Breakdown Voltage

BVGDO

IG=-100μA

-20

Gate Source Cut off Voltage

VGS(OFF)

VDS=5V, ID=1μA

-0.2

-0.6

-1.2

Drain Current

IDSS

VDS=5V, VGS=0

140

350

μA

Forward Transfer Admittance

lYFSl

VDS=5V, VGS=0, f=1KHz

0.5

1.2

Input Capacitance

CISS

VDS=5V, VGS=0, f=1MHz

3.5

Output Capacitance

CRSS

VDS=5V, VGS=0, f=1MHz

0.65

Voltage Gain

VIN=10mV, f=1KHz

-3

Reduced Voltage Characteristic

△

GVV

VIN=10mV,f=1KHz, VCC=4.5V→1.5V

-1.2

-3.5

Frequency Characteristic

△

GVf

f=1KHz to 110Hz

-1

Input Resistance

ZIN

f=1KHz

Output Resistance

f=1KHz

700

Ω

Total Harmonic distortion

THD

VIN=30mV, f=1KHz

Output Noise Voltage

VNO

VIN=0

-110

CLASSIFICATION OF IDSS

RANK

RANGE

140-240

210-350

TF202G-X-AC3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

TF202G-X-AC3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL