công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

Preview PDF HTML

SSM3K333RG-AE3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện SSM3K333RG-AE3-R
Giải thích chi tiết về linh kiện  6A, 30V N-CHANNEL POWER MOSFET
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

SSM3K333RG-AE3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

  SSM3K333RG-AE3-R Datasheet HTML 1Page - Unisonic Technologies SSM3K333RG-AE3-R Datasheet HTML 2Page - Unisonic Technologies SSM3K333RG-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
SSM3K333R
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
VER.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID (Note 2)
6
A
Pulsed
IDM (Note 2)
12
A
Power Dissipation
PD (Note 3)
1
W
t=10s
2
W
Channel Temperature
TCH
150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The channel temperature should not exceed 150°C during use.
3. Mounted on a FR4 board.(25.4mm×25.4mm×1.6mm, Cu Pad: 645mm
2)
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=10mA, VGS=0V
30
V
Drain-Source Leakage Current
IDSS
VDS=30V, VGS=0V
1
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100 nA
Reverse
VGS=-20V, VDS=0V
-100 nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS= VGS, ID=0.1mA
1.3
2.5
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=3A (Note 2)
25.7
42
mΩ
VGS=10V, ID=5A (Note 2)
18.7
28
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=15V, f=1.0MHz
436
pF
Output Capacitance
COSS
77
pF
Reverse Transfer Capacitance
CRSS
28
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=4.5V, VDD=15V, ID=6A
3.4
nC
Gate to Source Charge
QGS
1.8
nC
Gate to Drain Charge
QGD
1.0
nC
Turn-ON Delay Time
tD(ON)
VDD=15V, ID=3A, VGS=0~4.5V,
RG=10Ω
12
ns
Turn-OFF Delay Time
tD(OFF)
9
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
ISD=6A, VGS=0V
0.85 1.2
V
Notes: 1. The channel temperature should not exceed 150°C during use.
2. Pulse test



Html Pages

1 2 3


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com