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MPSA05 bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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MPSA05 bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() MPSA05/55 AMPLIFIER TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R201-034.Ba ABSOLUTE MAXIMUM RATING (T A=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 4 V Collector current - Continuous IC 500 mA Total device dissipation, @TA=25℃ Derate above 25℃ PD 625 5 mW mW/℃ Total device dissipation, @TC=25℃ Derate above 25℃ PD 1500 12 mW mW/℃ Junction Temperature TJ 125 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Thermal resistance, junction to ambient (Note) RθJA 200 ℃/W Thermal resistance, junction to case RθJC 83.3 ℃/W Note: RθJA is measured with the device soldered into a typical printed circuit board. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Collector-emitter breakdown voltage (note 1) V(BR)CEO IC=1.0mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, Ic=0 4 V Collector cutoff current ICES VCE=60V, IB=0 0.1 μA Collector cutoff current ICBO VCB=60V, IE=0 0.1 μA ON CHARACTERISTICS DC current gain hFE IC=10mA, VCE=1V IC=100mA, VCE=1V 100 100 Collector-emitter saturation voltage VCE(SAT) IC=100mA, IB=10mA 0.25 V Base-emitter on voltage VBE(ON) IC=100mA, VCE=1V 1.2 V SMALL-SIGNAL CHARACTERISTICS MPSA05 IC=10mA, VCE=2V, f=100MHz 100 MHz Current gain bandwidth product (note 2) MPSA55 fT IC=100mA, VCE=1V, f=100MHz 50 MHz Note 1. Pulse test: PW<=300 μs, Duty Cycle<=2% 2. fT is defined as the frequency at which IhfeI extrapolates to unity. |
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