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MMDT3906L-AL6-R bảng dữ liệu(PDF) 3 Page - Unisonic Technologies

tên linh kiện MMDT3906L-AL6-R
Giải thích chi tiết về linh kiện  DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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MMDT3906L-AL6-R bảng dữ liệu(HTML) 3 Page - Unisonic Technologies

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MMDT3906
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R218-014.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current-Continuous
IC
-200
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
-55~+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
625
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF Characteristics (Note)
Collector-Base Breakdown Voltage
V(BR)CBO IC=-10 µA, IE=0
-40
V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=-1.0mA, IB=0
-40
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE=-10µA, IC=0
-5.0
V
Collector Cutoff Current
ICEX
VCB= -30V, VEB(OFF)=-3.0V
-50
nA
Base Cutoff Current
IBL
VEB=-30V, VEB(OFF)=-3.0V
-50
nA
ON Characteristics (Note)
IC=-100μA, VCE=-1.0V
60
IC=-1.0mA, VCE=-1.0V
80
IC=-10mA, VCE=-1.0V
100
300
IC=-50mA, VCE=-1.0V
60
DC Current Gain
hFE
IC=-100mA, VCE=-1.0V
30
IC=-10mA, IB=-1.0mA
-0.25
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-50mA, IB=-5.0mA
-0.40
V
IC=-10mA, IB=-1.0mA
-0.65
-0.85
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-50mA, IB=-5.0mA
-0.95
V
Small Signal Characteristics
Output Capacitance
COBO
VCB=-5.0V, IE=0, f=1.0MHz
4.5
pF
Input Capacitance
CIBO
VEB=-0.5V, IC=0, f=1.0MHz
10
pF
Input Impedance
hIE
2.0
12
kΩ
Voltage Feedback Ratio
hRE
0.1
10 ×10
-4
Small Signal Current Gain
hFE
100
400
Output Admittance
hOE
VCE=10V, IC=1.0mA, f=1.0kHz
3.0
60
μS
Current Gain-Bandwidth Product
fT
VCE=-20V, IC=-10mA, f=100MHz
250
MHz
Noise Figure
NF
VCE=-5.0V, IC=-100μA,
RS=1.0kΩ, f=1.0kHz
4.0
dB
Switching Characteristics
Delay Time
tD
35
ns
Rise Time
tR
VCC=-3.0V, IC= -10mA,
VBE(OFF)=0.5V, IB1= -1.0mA
35
ns
Storage Time
tS
225
ns
Fall Time
tF
VCC=-3.0V, IC= -10mA,
IB1= IB2=-1.0mA
75
ns
Note: Short duration pulse test used to minimize self-heating effect.



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