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MMBTA94-AE3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies |
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MMBTA94-AE3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() MMBTA94 PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R206-008,E ABSOLUTE MAXIMUM RATING (Ta=25°С unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage VCEO -400 V Emitter-Base Voltage VEBO -6 V Collector Current IC -300 mA Collector Dissipation (Ta=25 °C) PC 350 mW Junction Temperature TJ +150 °С Storage Temperature TSTG -40~+150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC =-100µA,IE=0 -400 V Collector-Emitter Breakdown Voltage BVCEO IC =-1mA,IB=0 -400 V Collector-Emitter Breakdown Voltage BVCES IC =-100µA,VBE=0 -400 V Emitter-Base Breakdown Voltage BVEBO IE=-100µA,Ic=0 -5 V Collector Cut-off Current ICBO VCB=-300V,IE=0 -100 nA Collector Cut-off Current ICES VCB=-400V,VBE=0 -1 µA Emitter Cut-off Current IEBO VEB=-4V,IC=0 100 nA VCE=-10V,IC=-1mA 60 VCE=-10V,IC=-10mA 70 300 VCE=-10V,IC=-50mA 70 DC Current Gain (Note) hFE VCE=-10V,IC=-100mA 40 IC=-10mA,IB=-1mA -0.20 V Collector-Emitter Saturation Voltage VCE(SAT) IC=-50mA,IB=-5mA -0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC=-10mA,IB=-1mA -0.75 V Output Capacitance Cob VCB=-20V,IE=0, f=1MHz 7 pF Note: Pulse test: PW <300µs, Duty Cycle<2% |
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