MJE13003L-X-T92-R datasheet(2/8 Pages) UTC

2 / 8 page

MJE13003

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 8

www.unisonic.com.tw

QW-R204-004,N

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

VCEO(SUS)

400

Collector-Base Voltage

VCBO

700

Emitter Base Voltage

VEBO

Collector Current

Continuous

1.5

Peak (1)

ICM

Base Current

Continuous

0.75

Peak (1)

IBM

1.5

Emitter Current

Continuous

2.25

Peak (1)

IEM

4.5

Power Dissipation

(TC=25°C)

TO-126 / TO-126C

1.4

TO-92 / TO-92L

1.1

TO-220

TO-251/ TO-252

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

(Note)

Collector-Emitter Sustaining Voltage

VCEO(SUS) IC=10mA , IB=0

400

Collector Cutoff Current

TC=25°C

ICEO

VCEO=Rated Value,

VBE(OFF)=1.5 V

TC=100°C

Emitter Cutoff Current

IEBO

VEB=9V, IC=0

SECOND BREAKDOWN

Second Breakdown Collector Current with bass

forward biased

Is/b

See Fig.5

Clamped Inductive SOA with base reverse biased

RBSOA

See Fig.6

ON CHARACTERISTICS

(Note)

DC Current Gain

hFE1

IC=0.5A, VCE=5V

hFE2

IC=1A, VCE=5V

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=0.5A, IB=0.1A

0.5

IC=1A, IB=0.25A

IC=1.5A, IB=0.5A

IC=1A, IB=0.25A, TC=100°C

Base-Emitter Saturation Voltage

VBE(SAT)

IC=0.5A, IB=0.1A

IC=1A, IB=0.25A

1.2

IC=1A, IB=0.25A, TC=100°C

1.1

DYNAMIC CHARACTERISTICS

Current-Gain-Bandwidth Product

IC=100mA, VCE=10V, f=1MHz

MHz

Output Capacitance

COB

VCB=10V, IE=0, f=0.1MHz

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