7N80L-TQ2-R datasheet(2/6 Pages) UTC

2 / 6 page

7N80

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-523.c

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

800

Gate-Source Voltage

VGSS

±30

Continuous

Drain Current

Pulsed (Note 1)

IDM

26.4

Single Pulsed (Note 2)

EAS

580

Avalanche Energy

Repetitive (Note 1)

EAR

16.7

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.5

V/ns

TO-220 /TO-263

142

Power Dissipation

TO-220F/ TO-220F1

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L=25mH, IAS=6.6A, VDD= 50V, RG=25Ω, Starting TJ=25°C

3. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

4. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°C/W

TO-220/TO-263

0.88

°C/W

Junction to Case

TO-220F / TO-220F1

θJC

2.6

°C/W

7N80L-TQ2-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

7N80L-TQ2-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL