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6N60Z bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện 6N60Z
Giải thích chi tiết về linh kiện  6.2A, 600V N-CHANNEL POWER MOSFET
PDF  6 Pages
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nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
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6N60Z bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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6N60Z
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-741.a
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
6.2
A
Continuous Drain Current
ID
6.2
A
Pulsed Drain Current (Note 2)
IDM
24.8
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
440
mJ
Repetitive (Note 2)
EAR
13
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
Power Dissipation
PD
40
W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 14mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient
θJA
62.5
°C/W
Junction to Case
θJC
3.2
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
600
V
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
10
μA
Gate- Source Leakage Current
Forward
IGSS
VGS = 20V, VDS = 0V
5
μA
Reverse
VGS = -20V, VDS = 0V
-5
μA
Breakdown Voltage Temperature Coefficient
BV
△
DSS/△TJ
ID=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.1A
1.0
1.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V,
f=1.0 MHz
770 1000 pF
Output Capacitance
COSS
95
120
pF
Reverse Transfer Capacitance
CRSS
10
13
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD=300V, ID =6.2A,
RG =25Ω (Note 1, 2)
20
50
ns
Turn-On Rise Time
tR
70
150
ns
Turn-Off Delay Time
tD(OFF)
40
90
ns
Turn-Off Fall Time
tF
45
100
ns
Total Gate Charge
QG
VDS=480V, ID=6.2A,
VGS=10 V (Note 1, 2)
20
25
nC
Gate-Source Charge
QGS
4.9
nC
Gate-Drain Charge
QGD
9.4
nC



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