4N90

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-479.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain to Source Voltage

900

V

Gate to Source Voltage

±30

V

Avalanche Current (Note 2)

4

A

Continuous

4

A

Continuous Drain Current

Pulsed (Note 2)

16

A

Single Pulsed (Note 3)

570

mJ

Avalanche Energy

Repetitive (Note 2)

14

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

140

TO-220F

47

TO-252

54

W

TO-220

1.12

TO-220F

0.38

Derate above 25°C

TO-252

0.43

W/°C

Operating Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note :

1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

TO-220F

62.5

Junction to Ambient

TO-252

110

°C/W

TO-220

0.89

TO-220F

2.66

Junction to Case

TO-252

2.3

°C/W