4N50L-TN3-R datasheet(2/6 Pages) UTC

2 / 6 page

4N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-525.c

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

500

Gate-Source Voltage

VGSS

±30

Continuous (TC=25°C)

Drain Current

Pulsed (Note 3)

IDM

16 (Note 2)

Avalanche Current (Note 3)

IAR

Single Pulsed (Note 4)

EAS

216

Avalanche Energy

Repetitive (Note 3)

EAR

8.5

Peak Diode Recovery dv/dt (Note 5)

dv/dt

4.5

V/ns

TO-220

TO-220F

Power Dissipation

TO-252

TO-220

0.67

TO-220F

0.22

Derate above 25°C

TO-252

0.41

W/°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

4. L = 27mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

5. ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

TO-220F

62.5

Junction to Ambient

TO-252

θJA

110

°C/W

TO-220

1.47

TO-220F

4.5

Junction to Case

TO-252

θJC

2.4

°C/W

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