2SD1857

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R201-057,F

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

120

V

Collector-Emitter Voltage

120

V

Emitter-Base Voltage

5

V

Collector Power Dissipation

TO-92NL

0.5

W

TO-92

1

TO-251

2

Collector Current

2

A

Collector Current

3

A

Junction Temperature

+150

℃

Storage Temperature

-40 ~ +150

℃

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

120

V

Collector-Emitter Breakdown Voltage

120

V

Emitter-Base Breakdown Voltage

5

V

Collector Cut-Off Current

1

µA

Emitter Cut-Off Current

1

µA

DC Current Transfer Ratio

82

390

Collector-Emitter Saturation Voltage

0.4

V

Transition Frequency

80

MHz

Output Capacitance

20

pF

Note: Measured using pulse current.

RANK

P

Q

R

RANGE

82-180

120-270

180-390