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2SC4027L-X-TN3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện 2SC4027L-X-TN3-R
Giải thích chi tiết về linh kiện  HIGH-VOLTAGE SWITCHING APPLICATIONS
PDF  5 Pages
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nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
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2SC4027L-X-TN3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

  2SC4027L-X-TN3-R Datasheet HTML 1Page - Unisonic Technologies 2SC4027L-X-TN3-R Datasheet HTML 2Page - Unisonic Technologies 2SC4027L-X-TN3-R Datasheet HTML 3Page - Unisonic Technologies 2SC4027L-X-TN3-R Datasheet HTML 4Page - Unisonic Technologies 2SC4027L-X-TN3-R Datasheet HTML 5Page - Unisonic Technologies  
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2SC4027
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R209-018.C
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
180
V
Collector to Emitter Voltage
VCEO
160
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
1.5
A
Collector Current (Pulse)
ICP
2.5
A
Collector Dissipation
TA=25°C
TO-220
PC
2
W
TO-252
1
TC=25°C
TO-220
65
W
TO-252
15
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=10A, IE=0
180
V
Collector-Emitter Breakdown Voltage
BVCEO
IC =1mA, RBE=∞
160
V
Emitter-Base Breakdown Voltage
BVEBO
IE=10μA, IC =0
6
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC =500mA, IB=50mA
0.13 0.45
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC =500mA, IB=50mA
0.85
1.2
V
Collector Cutoff Current
ICBO
VCB=120V, IE=0
1.0
μA
Emitter Cutoff Current
IEBO
VEB=4V, I IC =0
1.0
μA
DC Current Gain
hFE1
VCE=5V, IC =100mA
100
400
hFE2
VCE=5V, IC =10mA
80
Gain-Bandwidth Product
fT
VCE=10V, IC =50mA
120
MHz
Output Capacitance
COB
VCB=-10V, f=1MHz
12
pF
Turn-On Time
TON
See specified Test Circuit
60
μs
Storage Time
TSTG
1.2
μs
Fall Time
tF
80
μs
CLASSIFICATION OF hFE1
RANK
R
S
T
RANGE
100~200
140~280
200~400



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