2SB1132G-X-AB3-R datasheet(2/5 Pages) UTC

2 / 5 page

2SB1132

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R208-016.C

ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-40

Collector-Emitter Voltage

VCEO

-32

Emitter-Base Voltage

VEBO

-5

Collector Current

-1

Collector Current (Single pulse, Pw=100ms)

PULSE

-2

Collector Power Dissipation

SOT-89

0.5

TO-252

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector Base Breakdown Voltage

BVCBO IC = -50μA

-40

Collector Emitter Breakdown Voltage

BVCEO IC = -1mA

-32

Emitter Base Breakdown Voltage

BVEBO IE= -50μA

-5

Collector Cut-Off Current

ICBO

VCB= -20V

-0.5

μA

Emitter Cut-Off Current

IEBO

VEB= -4V

-0.5

μA

Collector-Emitter Saturation Voltage

VCE(SAT) IC = -500mA,IB= -50mA (Note)

-0.2

-0.5

DC Current Transfer Ratio

hFE

VCE= -3V,IC = -0.1A (Note)

390

Transition Frequency

VCE= -5V, IE= 50mA, f=30MHz

150

MHz

Output Capacitance

COB

VCB= -10V, IE=0A, f=1MHz

Note: Measured using pulse current.

CLASSIFICATION OF hFE

RANK

RANGE

82-180

120-270

180-390

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