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2SB766AL-X-AB3-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện 2SB766AL-X-AB3-R
Giải thích chi tiết về linh kiện  LOW FREQUENCY OUTPUT AMPLIFICATION
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nhà sản xuất  UTC [Unisonic Technologies]
Trang chủ  http://www.utc-ic.com
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2SB766AL-X-AB3-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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2SB766A
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R208-028,B
ABSOLUTE MAXIMUM RATINGS ( TA=25°C )
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-1
A
Peak Collector Current
ICP
-1.5
A
Collector Power Dissipation (Note 2)
PC
1
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Printed circuit board :Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector
portion
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector Base Voltage
VCBO
IC= -10μA ,IE=0
-60
V
Collector Emitter Voltage
VCEO
IC= -2mA ,IB= 0
-50
V
Emitter Base Voltage
VEBO
IE= -10μA, IC=0
-5
V
Collector Cut-Off Current
ICBO
VCB= -20V,IE=0
-0.1
μA
DC Current Transfer Ratio
hFE1
VCE= -10V,IC= -500mA (Note)
85
340
hFE2
VCE= -5V,IC= -1A (Note)
50
Collector-Emitter Saturation Voltage
VCE(SAT)
IC = -500mA,IB =-50mA (Note)
-0.2
-0.4
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC = -500mA,IB =-50mA (Note)
-0.85
-1.2
V
Transition Frequency
fT
VCB= -10V, IE= 50mA, f=200MHz
200
MHz
Output Capacitance
COB
VCB= -10V, IE= 0, f=1MHz
20
30
pF
Note: Pulse measurement
CLASSIFICATION OF hFE1
RANK
Q
R
S
RANGE
85-170
120-240
170-340



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