2SA1797L-X-AA3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SA1797

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R208-029,F

ABSOLUTE MAXIMUM RATINGS (T

A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-6

Collector Current

-2

PULSE(Note 1)

-5

Collector Power Dissipation

TO-92NL

SOT-223

0.8

SOT-89

0.5

TO-252

1.9

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: 1. Single pulse, PW=10ms

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

A=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC = -50μA

-50

Collector-Emitter Breakdown Voltage

BVCEO

IC = -1mA

-50

Emitter-Base Breakdown Voltage

BVEBO

IE = -50μA

-6

Collector Cutoff Current

ICBO

VCB = -50V

-0.1

μA

Emitter Cutoff Current

IEBO

VEB = -5V

-0.1

μA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC/IB = -1A/-50mA

(Note)

-0.15 -0.35

DC Current Gain

hFE

VCE = -2V, IC=-0.5A

(Note)

120

400

Transition Frequency

VCE = -2V, IE=0.5A, f=100MHz

200

MHz

Output Capacitance

COB

VCB = -10V, IE=0A, f=1MHz

Note: Measured using pulse current.

CLASSIFICATION OF hFE

RANK

RANGE

120-240

200-400

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