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2N7002L-AE2-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

tên linh kiện 2N7002L-AE2-R
Giải thích chi tiết về linh kiện  0.3A, 60V N-CHANNEL POWER MOSFET
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2N7002L-AE2-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

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2N7002
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R206-037,K
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage (RGS ≤1MΩ)
VDGR
60
V
Gate Source Voltage
Continuous
VGSS
±20
V
Non Repetitive(tP<50μs)
±40
Drain Current
Continuous
ID
300
mA
Pulsed
800
Power Dissipation
PD
200
mW
Derated Above 25°C
1.6
mW/°C
Junction Temperature
TJ
+ 150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
625
°C/W
Junction to Case
θJC
215
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=10μA
60
V
Drain-Source Leakage Current
IDSS
VDS=60V, VGS =0V
1
μA
Gate-Source Leakage Current
IGSSF
VGS =20V, VDS=0V
100
nA
IGSSR
VGS =-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
(Note)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID=250μA
1
2.1
2.5
V
Drain-Source On-Voltage
VDS (ON)
VGS = 10V, ID=300mA
0.6
3.75
V
VGS = 5.0V, ID=50mA
0.09
1.5
Static Drain-Source On-Resistance
RDS (ON)
VGS =10V, ID=300mA
7.5
Ω
VGS =5.0V, ID=50mA
7.5
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V,VGS=0V,f=1.0MHz
20
50
pF
Output Capacitance
COSS
11
25
pF
Reverse Transfer Capacitance
CRSS
4
5
pF
Turn-On Time
tON
VDD=30V, RL=150Ω, ID=200mA,
VGS =10V, RGEN =25Ω
20
nS
Turn-Off Time
tOFF
VDD=30V, RL=25Ω, ID=200mA,
VGS=10V, RGEN =25Ω
20
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, Is=300mA (Note)
0.88
1.5
V
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
0.8
A
Maximum Continuous Drain-Source
Diode Forward Current
IS
300
mA
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%



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