1N40L-T92-R datasheet(2/4 Pages) UTC

2 / 4 page

1N40

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R502-529.b

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

400

Gate-Source Voltage

VGSS

±30

Continuous (TC=25°C)

1.4

Drain Current

Pulsed (Note 2)

IDM

5.6

Avalanche Current (Note 2)

IAR

1.4

Single Pulsed (Note 3)

EAS

Avalanche Energy

Repetitive (Note 2)

EAR

2.5

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220

Power Dissipation

TO-92

2.5

TO-220

0.2

W/°C

Derate above 25°C

TO-92

0.02

W/°C

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 75mH, IAS = 1.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 1.8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

Junction to Ambient

TO-92

θJA

140

°C/W

TO-220

5.0

Junction to Case

TO-92

θJC

°C/W

1N40L-T92-R bảng dữ liệu(PDF) 2 Page - Unisonic Technologies

1N40L-T92-R bảng dữ liệu(HTML) 2 Page - Unisonic Technologies

Html Pages

1 2 3 4

bảng dữ liệu tải về

Link URL