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IL300 bảng dữ liệu(PDF) 2 Page - Siemens Semiconductor Group

tên linh kiện IL300
Giải thích chi tiết về linh kiện  LINEAR OPTOCOUPLER
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IL300 bảng dữ liệu(HTML) 2 Page - Siemens Semiconductor Group

  IL300 Datasheet HTML 1Page - Siemens Semiconductor Group IL300 Datasheet HTML 2Page - Siemens Semiconductor Group IL300 Datasheet HTML 3Page - Siemens Semiconductor Group IL300 Datasheet HTML 4Page - Siemens Semiconductor Group IL300 Datasheet HTML 5Page - Siemens Semiconductor Group IL300 Datasheet HTML 6Page - Siemens Semiconductor Group IL300 Datasheet HTML 7Page - Siemens Semiconductor Group IL300 Datasheet HTML 8Page - Siemens Semiconductor Group  
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5–2
IL300
IL300 Terms
KI—Servo Gain
The ratio of the input photodiode current (IP1) to the LED cur-
rent(IF). i.e., K1 = IP1/ IF.
K2—Forward Gain
The ratio of the output photodiode current ( IP2) to the LED
current (IF), i.e., K2 = IP2/ IF.
K3—Transfer Gain
The Transfer Gain is the ratio of the Forward Gain to the Servo
gain, i.e., K3 = K2/K1.
∆K3—Transfer Gain Linearity
The percent deviation of the Transfer Gain, as a function of
LED or temperature from a specific Transfer Gain at a fixed
LED current and temperature.
Photodiode
A silicon diode operating as a current source. The output cur-
rent is proportional to the incident optical flux supplied by the
LED emitter. The diode is operated in the photovoltaic or pho-
toconductive mode. In the photovoltaic mode the diode func-
tions as a current source in parallel with a forward biased
silicon diode.
The magnitude of the output current and voltage is depen-
dant upon the load resistor and the incident LED optical flux.
When operated in the photoconductive mode the diode is
connected to a bias supply which reverse biases the silicon
diode. The magnitude of the output current is directly propor-
tional to the LED incident optical flux.
LED (Light Emitting Diode)
An infrared emitter constructed of AlGaAs that emits at 890
nm operates efficiently with drive current from 500
µA to 40
mA. Best linearity can be obtained at drive currents between
5 mA to 20 mA. Its output flux typically changes by –0.5%/
°C
over the above operational current range.
Absolute Maximum Ratings
Symbol
Min.
Max.
Unit
Emitter
Power Dissipation
(TA=25°C)
PLED
160
mW
Derate Linearly from 25
°C
2.13
mW/
°C
Forward Current
lf
60
mA
Surge Current
(Pulse width <10
µs)
lpk
250
mA
Reverse Voltage
VR
5V
Thermal Resistance
Rth
470
°C/W
Junction Temperature
TJ
100
°C
Detector
Power Dissipation
PDET
50
mA
Derate linearly from 25
°C
0.65
mW/
°C
Reverse Voltage
VR
50
V
Junction Temperature
TJ
100
°C
Thermal Resistance
Rth
1500
°C/W
Coupler
Total Package
Dissipation at 25
°C
PT
210
mW
Derate linearly from 25
°C
2.8
mW/
°C
Storage Temperature
TS
–55
150
°C
Operating Temperature
TOP
–55
100
°C
Isolation Test Voltage
5300
VACRMS
Isolation Resistance
VIO=500 V, TA=25°C
VIO=500 V, TA=100°C
10
12
10
11
Ω
Ω



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