N0100P datasheet(5/8 Pages) RENESAS

tên linh kiện	N0100P

Giải thích chi tiết về linh kiện	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	RENESAS [Renesas Technology Corp]

Trang chủ	http://www.renesas.com

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Data Sheet D20203EJ1V0DS

N0100P

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

100

120

100

125

150

175

TA - Ambient Temperature -

°C

0.2

0.4

0.6

0.8

1.2

1.4

1.6

100

125

150

175

Mounted on 2500 mm

2 x 35 μ m

Coper Pad Connected to

Drain Electrode, t

≤ 5 sec

TA - Ambient Temperature -

°C

FORWARD BIAS SAFE OPERATING AREA

-0.01

-0.1

-1

-10

-100

-0.1

-1

-10

-100

ID(DC) = –3.5 A

ID(pulse) = –12 A

TA = 25

°C

Single Pulse

Mounted on FR-4 board of

50 mm x 50 mm x 1.6 mm,

copper foil 50 mm x 50 mm, t

≤ 5 sec.

) L

im1

ite

= –

4.5

110

0 m

110

11m

= 3

μs

5 s

VDS - Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

0.1

100

1000

Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm

Mounted on 2500 mm

2 x 35 μ m

Coper Pad Connected to Drain Electrode

PW - Pulse Width - s

0.1 m

1 m

10 m

100 m

100

1000

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